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| NJL5901R COBP PHOTO REFLECTOR GENERAL DESCRIPTION The NJL5901R is the small and thin surface mount type photo reflector including a high output infrared LED and a high sensitive Si photo transistor. Compared with the former reflectors, the mounting area is reduced to 45% FEATURES * Pb free solder re-flowing permitted(260C, 2times) * Miniature, thin, surface mount 1.6mm x 2.4mm x 0.8mm * Built-in visible light cut-off filter * High output, high S/N ratio OUTLINE (typ.) 2.4 1.47 (0.73) C 0.1 (0.33) A (1.05) 0.1 0.65 Unit : mm 0.2 0.1 0.65 0.1 0.5 0.5 0.2 0.1 0.7 0.85 PCB Pattern (0.47) 1.6 0.1 APPLICATIONS * End detector of video, audio tape * Rotation detection of various motors, audio turntables * Paper edge detection and mechanism timing detection of facsimile, copy machine etc. * Detecting the location of pick up head for CD-R/RW etc. * Reading film information and mechanism timing of camera * Bar code reader, encoder, automatic vending machine * Various detection in industrial system PT CENTER LED CENTER 0.85 0.8 A:anode K:cathode C:collector E:emitter ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Emitter Forward Current (Continuous) Reverse Voltage (Continuous) Power Dissipation Detector Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Coupled Total Power Dissipation Operating Temperature Storage Temperature Reflow Soldering Temperature SYMBOL IF VR PD VCEO VECO IC PC Ptot Topr Tstg Tsol RATINGS 30 6 45 16 6 10 25 60 -20 to +85 -40 to +85 260 UNIT mA V mW V V mA mW mW C C C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER Emitter Forward Voltage Reverse Current Capacitance Detector Dark Current Collector-Emitter Voltage Coupled Output Current Operating Dark Current *1 Rise Time Fall Time SYMBOL VF IR Ct ICEO VCEO IO ICEOD tr tf TEST CONDITION IF=4mA VR=6V VR=0V,f=1MHz VCE=10V IC=100A IF=4mA,VCE=2V,d=0.7mm IF=4mA,VCE=2V IO=100A,VCE=2V,RL=1K,d=0.7mm IO=100A,VCE=2V,RL=1K,d=0.7mm MIN TYP MAX 1.4 10 UNIT V A pF A V A A s s -- -- -- -- 16 120 -- -- 25 -- -- -- -- 30 30 -- 0.2 -- 380 2 -- -- -- -- -- *1 Icoed may increase according to the periphery situation of the surface mounted product. 0.5 0.4 0.5 -1- 0.1 E K 0.1 0.65 0.65 0.5 0.5 NJL5901R OUTPUT CURRENT TEST CONDITION The infrared signal from LED is reflected at the aluminum surface. DARK CURRENT TEST CONDITION Light Sealed Dark Box 0.7mm Aluminum Evapolation Surface Io IF ICEOD IF VCE VCE RESPONSE TIME TEST CONDITION Aluminum Evapolation Surface RD P.G IF RL Io V+ 0.7mm Input 90% Output 10% tf OSC tr EDGE RESPONSE TEST CONDITION l=0mm l=0mm 0.7mm Aluminum Evaporation Surface Aluminum Evaporation Surface 0.7mm Direction X Direction Y -2- NJL5901R Power Dissipation vs. Temperature 100 90 80 Power Dissipation P(mW) 70 60 50 40 30 20 10 0 0 20 40 60 80 100 Ambient Temperature Ta(C) Forward Current IF(mA) 50 45 40 35 30 25 20 15 10 5 0 0 Forward Current vs. Temperature Total Power Dissipation Collector Power Dissipation 20 40 60 80 100 Ambient Temperature Ta(C) TYPICAL CHARACTERISTICS Forward Voltage vs. Forward Current 100 1.6 Forward Voltage vs. Temperature Forward Current IF(mA) 1.4 Forward Voltage VF(V) IF=30mA 1.2 10 IF=4mA 1 1 0 1 Forward Voltage VF(V) 2 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(C) Dark Current vs. Temperature 10000 1000 100 10 1 Operating Dark Current Iceod(A) 10 Operating Dark Current vs. Temperature Dark Current Iceo(nA) 1 Vce=10V 0.1 0.01 0.1 IF=4mA,Vce=2V 0.001 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(C) 0.01 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(C) -3- NJL5901R Output Current vs. Forward Current (Ta=25C) 1000 900 Relative Output Current Io/Io(25C)(%) 800 Output Current Io(A) 700 600 500 400 300 200 100 0 0 2 4 6 8 10 Forward Current IF(mA) 0 -40 100 120 Output Current vs. Temperature 80 60 40 IVce=2V,d=0.7m IF=4mA,Vce=2V 20 -20 0 20 40 60 80 100 Ambient Temperature Ta(C) Output Characteristics (Ta=25C) 1000 900 800 Output Current Io(A) 700 600 500 400 300 200 100 0 0 1 2 3 4 5 Collector-Emitter Voltage Vce(V) 0 0.1 0.5 Vce Saturation (Ta=25C) IF=10mA Collector-Emitter Voltage Vce(V) 0.4 IF=8mA 0.3 IF=6mA Io=400A Io=300A Io=200A Io=100A 0.2 IF=4mA IF=2mA 0.1 1 Forward Current IF(mA) 10 Output Current vs. Distance (Ta=25C) 120 Output Current vs. Edge Distance (Ta=25C) 120 IF=4mA,Vce=2V,d=0.7mm Relative Output Current Io/Io(max.)(%) 100 Relative Output Current Io/Io(max.)(%) 100 IF=4mA,Vce=2V 80 80 Direction Y 60 60 40 40 Direction X 20 20 0 0 1 2 3 4 5 Reflector Distance d(mm) 0 0 0.4 0.8 1.2 1.6 2 2.4 Edge Distance l(mm) -4- NJL5901R Spectral Response (Ta=25C) 120 1000 Switching Time vs. Load Resistance (Ta=25C) 100 Relative Response (%) Vce=2V Switching Time t(s) 80 100 tr tf 60 td 10 40 20 Vce=2V,Io=100A 0 500 1 600 700 800 900 1000 0.1 1 Load Resistance RL(k) 10 Wavelength (nm) -5- NJL5901R PRECAUTION FOR HANDLING 1. Soldering to actual circuit board Soldering condition The surface temperature of plastic package is lower than 260 C. Soldering Method 1) Reflow Method Soldering to be done within twice under the recommended condition mentioned below f 260C 230C 220C 180C 150C e d a : Temperature ramping rate b : Pre-heating temperature time c : Temperature ramping rate d : 220C or higher time e : 230C or higher time f : Peak temperature g : Temperature ramping rate : 1 to 4C/s : 150 to 180C : 60 to 120s : 1 to 4C /s : Shorter than 60s : Shorter than 40s : Lower than 260C : 1 to 6C /s The temperature of the surface of mold package Room Temp. a b c g 2) Reflow Method (In case of infrared heating) The temperature profile is same as the above Avoid direct irradiation to the plastic package because it may absorb the Infrared Radiation and its surface temperature will be higher than the lead. 3) The other method Avoid rapid heating up like dipping the devices directly into the melting solder or vapor phase method (VPS). Solder the device in short time as soon as possible. If the device is heated and kept in high temperature for longer time, its reliability would be affected. 2. Cleaning Avoid washing the device after soldering by reflow method. 3. Attention in handling 1) Treat not to touch the lens surface. 2) Avoid dust and any other foreign materials on the lens surface such as paint, bonding material, etc. 4. Storage Mount the device as soon as possible after opening the envelope. In order to prevent from degradation by the moisture at the reflow process, the device is contained in damp proof packaging. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -6- |
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